Характеристики
TIP142G, Биполярный транзистор, NPN, 100 В, 125 Вт, 10 А, 500 hFEThe TIP142G is a 100V NPN complementary silicon Darlington Power Transistor designed for general purpose amplifier and low frequency switching applications. It has monolithic construction with built-in base-emitter shunt resistor. The TIP142 (NPN) and TIP147 (PNP) are complementary devices.
• High DC current gain
• 100VDC Minimum collector-emitter sustaining voltage (VCEO (sus))
• 100VDC Collector to base voltage (VCBO)
• 5VDC Emitter to base voltage (VEBO)
• 1 C/W Thermal resistance, junction to case
• 35.7 C/W Thermal resistance, junction to ambient
Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы