Характеристики
PMGD780SN,115, Двойной МОП-транзистор, Двойной N Канал The PMGD780SN, 115 is a dual N-channel enhancement-mode FET in a surface-mount plastic package using TrenchMOS™ technology. It is suitable for driver circuits and switching in portable appliances applications. The device offers 40% smaller footprint.
• Fast switching speed
• Low ON-state resistance
Полупроводники — ДискретныеТранзисторыМОП-транзисторы