Характеристики
NTD6416ANLT4G, МОП-транзистор, N Канал, 19 А, 100 В, 68 мОм The NTD6416ANLT4G is a N-channel Power MOSFET offers 100V drain source voltage and 19A continuous drain current.
• Lower RDS (ON)
• High current capability
• 100% Avalanche tested
• -55 to 175 C Operating junction temperature range
Полупроводники — ДискретныеТранзисторыМОП-транзисторы