Характеристики
MJE802G, Биполярный транзистор, NPN, 80 В, 40 Вт, 4 А, 100 hFEThe MJE802G is a 4A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications.
• Complementary device
• Monolithic construction with built-in base-emitter resistors to limit leakage multiplication
Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы