Характеристики
IXTP4N80P, МОП-транзистор, N Канал, 4 А, 800 В, 3 Ом, 10 В, 5.5 ВThe IXTP4N80P is a PolarHV™ N-channel enhancement-mode Power MOSFET features avalanche rated and low package inductance.
• International standard package
• Unclamped inductive switching (UIS) rated
• Easy to mount
• Space savings
• High power density
Полупроводники — ДискретныеТранзисторыМОП-транзисторы