Характеристики
IRLU3110ZPBFThe IRLU3110ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in industrial applications and a wide variety of other applications.
• Advanced process technology
• Repetitive avalanche allowed up to Tjmax
• Logic level
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: I-Pak, инфо: Полевой транзистор, N-канальный, 100 В, 42 А, 140 Вт