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Транзистор IRG4BC20UD-SPBF, IGBT 600В 13А 8-60кГц, [D2-Pak]

Поставка электронных компонентов в Белгород

88,00 руб.

x 88,00 = 88,00
Артикул: 1128291 Категории: ,
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Склад №110-12 дней88,00руб.81,84руб.79,20руб.77,44руб.72,16руб.70,40руб.68,64руб.63,36руб.
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Склад №25-7 дней159,28руб.146,08руб.143,44руб.139,92руб.130,24руб.127,60руб.124,08руб.111,76руб.
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Склад №35 дней205,92руб.190,08руб.185,68руб.181,28руб.168,96руб.164,56руб.161,04руб.144,32руб.
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Склад №47-10 дней105,60руб.96,80руб.95,04руб.92,40руб.86,24руб.84,48руб.81,84руб.73,92руб.
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Склад №55 дней203,28руб.187,44руб.183,04руб.178,64руб.173,36руб.167,20руб.158,40руб.142,56руб.

Характеристики

IRG4BC20UD-SPBF, IGBT 600В 13А 8-60кГц, [D2-Pak] Co-Pack IGBT up to 20A, International Rectifier
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Дополнительная информация

Корпус

d2-pak
Структура

n-канал