IPD50R1K4CEBTMA1, МОП-транзистор, N Канал, 3.1 А, 500 В

Характеристики

IPD50R1K4CEBTMA1, МОП-транзистор, N Канал, 3.1 А, 500 В The IPD50R1K4CE is a CoolMOS™ N-channel CE Power MOSFET optimized to meet highest efficiency standards. It provides all benefits of a fast switching Super-junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

• Reduced energy stored in output capacitance (Eoss)
• High body diode ruggedness
• Reduced reverse recovery charge (Qrr)
• Reduced gate charge (Qg)
• Easy control of switching behaviour
• Cost attractive alternative compared to standard MOSFETs
• Outstanding quality and reliability of CoolMOS™ technology
• Extremely low losses due to very low FOM RDS (ON) x Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Halogen-free
• Qualified for standard grade applications

Полупроводники — ДискретныеТранзисторыМОП-транзисторы