Характеристики
FDC6561ANThe FDC6561AN is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.
• Low gate charge
• Very fast switching
• Small footprint
• Low profile
Транзисторы / Полевые транзисторы / Сборки MOSFET транзисторов
Корпус: 6-SSOT, инфо: Сборка из полевых транзисторов, Dual N-канальный, 2.5 А, 30 В