Транзистор FDC5614P

Характеристики

FDC5614PThe FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild’s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or it can minimize the undesirable voltage spikes. This product is general usage and suitable for many different applications.

• Low gate charge
• High performance trench technology for extremely low RDS (on)

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: 6-SSOT, инфо: Полевой транзистор, P-канальный, 60 В, 3 А