Характеристики
FCD4N60TM, МОП-транзистор, N Канал, 3.9 А, 600 В, 1 Ом, 10 В, 5 ВThe FCD4N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
• Ultra low gate charge (Qg = 12.8nC)
• Low effective output capacitance (Coss.eff = 32pF)
• 100% avalanche tested
Полупроводники — ДискретныеТранзисторыМОП-транзисторы