Характеристики
FQS4903TF, Двойной МОП-транзистор, Двойной N Канал, 370 мА The FQS4903TF is a N-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
• Low gate charge
• Low Crss (4.5pF)
• 100% Avalanche tested
• ±25V Gate to source voltage
• 0.37A Continuous drain current
• 0.234A Pulsed drain current
Полупроводники — ДискретныеТранзисторыМОП-транзисторы