Характеристики
PBSS2515E,115, Биполярный транзистор, NPN, 15 В, 420 МГц The PBSS2515E, 115 is a 0.5A NPN breakthrough-in small signal (BISS) Transistor in an ultra-small surface-mount plastic package.
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• High efficiency due to less heat generation
• Smaller required printed-circuit board (PCB) area than for conventional transistors
• PNP complement is PBSS3515E
• 1Q Marking code
Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы